Extremely low noise characteristics of 0.1/spl mu/m /spl Gamma/-gate power metamorphic HEMT on GaAs substrate

The 0.1 /spl mu/m /spl Gamma/-gate power metamorphic high electron mobility transistors (MHEMTs) has been fabricated and the DC, microwave, and noise performance of the device were characterized. The MHEMT device shows the DC output characteristics having an extrinsic transconductance of 830 mS/mm and a threshold voltage of /spl square/0.62 V. The f/sub T/ and f/sub max/ obtained for the 0.1 /spl mu/m/spl times/100 /spl mu/m MHEMT device are 165 GHz and 275 GHz, respectively. The MHEMTs exhibit the minimum noise figure, NF/sub min/, of 0.64 dB and associated gain of 12.4 dB at 26 GHz. The NF/sub min/ measured at 40 GHz is 1.1 dB with associated gain of 9.7 dB. This noise data is the lowest value ever reported for /spl Gamma/-gate power MHEMT devices with InGaAs channel of 53% In.