Ohmic behavior and solid-phase reaction between Cu-Zr alloy in various composition and n-InP

The solid-phase reaction and/or diffusion at the contact interface of a Cu-Zr amorphous alloy film on InP varying the alloy composition around Cu/sub 60/Zr/sub 40/ were investigated so as to examine the correlation with the ohmic behavior of the contacts. The Cu/sub 60/Zr/sub 40//n-InP contact showed a linear I-V characteristic with extremely low contact resistance (/spl les/1/spl times/10/sup -6/ /spl Omega/cm/sup 2/) after rapid thermal annealing (RTA) at 500/spl deg/C. It was revealed that the solid-phase reaction at the Cu-Zr/n-InP interface is sensitive to the alloy composition, and the well-controlled Cu diffusion at contact interface is essential to obtain ohmic behavior in the Cu-Zr metallized InP contact.