A ferroelectric associative memory technology employing heterogate FGMOS structure

A ferroelectric associative memory technology has been developed using ferroelectric materials as a means of storing template vector information. In order to accommodate the ferroelectric memory cell to associative processing circuits, a heterogate floating-gate MOS structure has been developed. As a result, nondestructive reading of analog data written in the ferroelectric film has been made possible, allowing a wide voltage range of input signals to associative processing circuits. The concept has been experimentally verified using fabricated test devices and circuits.