Simplified "sinh" current mode lossy ELIN integrator

In this paper, a method for implementing a "sinh" lossy ELIN integrator, using a "sinh" ideal ELIN integrator, is presented. The "sinh" ideal ELIN integrator is based on a variable mapping in the state equations which describe the operation of an ideal integrator and on canceling one of the bias current of the "sinh" nonlinear transconductor. It is shown that the simplified "sinh" lossy ELIN integrator so obtained has a better behavior than other reported "sinh" lossy ELIN integrators. The simulations performed in 0.8 /spl mu/m BiCMOS technology confirm the theoretical results and a layout of the proposed structure is presented.