Current performance of high speed transistors

This work presents a comparison of high speed performance parameters between the main devices used nowadays in high speed demanding applications: SiGe HBT, InP HBT and InP HEMT. First of all, a description of the material properties and the structure characteristics is presented. Secondly, the merit figures that define the performance in this application field are discussed, and then the evolution of the transition frequency in the last twenty years is shown.