A study of the influence of N/sub 2/O and N/sub 2/ annealing processes on 4H-SiC MOS structures with deposited TEOS SiO/sub 2/ as gate oxide

4H-SiC MOS structures have been implemented using deposited SiO/sub 2/-TEOS oxides as an innovative gate process fabrication. The effect of SiO/sub 2/-TEOS post-deposition annealings has been analyzed. The main electrical properties have been extracted pointing out a considerable improvement on the electrical characteristics when the TEOS oxides were annealed at high temperatures. 4H-SiC MOSFETs have been fabricated using these oxides and the experimental results show an improvement of the effective channel mobility (up to 12cm/sup 2//Vs) with a significant reduction of the sub-threshold swing.