A 10 Gb/s burst-mode CDR IC in 0.13 /spl mu/m CMOS

A 10 Gb/s burst-mode CDR (clock and data recovery) IC, that is eight times faster than previous burst-mode ICs, is fabricated in a 0.13 /spl mu/m CMOS process. It amplifies an AC-coupled input burst by means of an edge detection technique, and extracts a clock within 5 UIs with a gated oscillator. It consumes 1.2 W from a 2.5 V supply.