Reliability failures due to charge injection in SOI under high voltage conditions

Applying high voltages at low temperatures to HV-PDMOST components, manufactured in high voltage SOI technologies, leads to a new degradation phenomenon. In this paper, we conclude that the HV-PDMOST reliability performance is limited by the local electrical field conditions in the drift region. Device calculations have been used successfully to optimise the electrical field conditions in the drift region. Simulations and measurements clearly show that the reliability performance is most effectively improved by a proper design of the drift region with respect to dimensions and doping profiles.