High power density InGaP PHEMTs for 26 V operation

This paper presents a high power density and high efficiency InGaP barrier PHEMT technology for 26 V operation. This device was evaluated for 3G infrastructure applications at 2.14 GHz and WiMAX applications at 3.5 GHz. At 2.14 GHz, under a two carrier WCDMA signal, a 32.4 mm packaged device delivered 10 W average power with 11.4 dB gain and 31.4% drain efficiency at -37 dBc IM3. At 3.5 GHz, under CW stimulus, a 14.4 mm device generated an output power of 22 W with associated drain efficiency of 56% and gain of 10.2 dB.