Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

A novel microstrip line layout is developed to directly measure the minimum noise figure (NF/sub min/) accurately instead of the complicated de-embedding procedure in the conventional CPW line. A very low NF/sub min/ of 1.05 dB at 10 GHz is directly measured in 16 gate finger 0.18 /spl mu/m MOSFETs without any de-embedding. Based on the accurate NF/sub min/ measurement, we have developed a self-consistent DC, S-parameters, and NF/sub min/ model to predict device characteristics after the continuous stress, with good accuracy.