Plasma properties of a novel commercial plasma source for high-throughput processing of c-Si solar cells

A novel commercial plasma source for high-throughput processing of crystalline silicon solar cells is presented. In this paper, the plasma properties of this so-called expanding thermal plasma (ETP) technique are addressed in detail and its application in an inline PECVD tool for ultrahigh-rate deposition of silicon nitride for antireflection coating purposes is described.