Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells

Studies of the effect of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) on Cu(In,Ga)Se/sub 2/ (CIGS) films and devices under various annealing conditions are reported in this paper. Several characterizations were carried out before and after each annealing. The results show that both of these two techniques could positively benefit the CIGS film properties and device performance.