Ultra High Power 10 kV, 50 A SiC PiN Diodes

Ultra high power 10 kV, 50 A SiC PiN diodes have been developed with a low forward voltage drop (V
_F
) of 3.75 V and a fast reverse recovery time of 150 nsec. This is the highest reported power rating for a single SiC chip (dimensions: 8.7 mm times 8.7 mm). Furthermore, all of the historical problems with the SiC PiN diode technology such as ineffective edge termination (V
_BD
increased to > 70% of ideal breakdown voltage), poor ohmic contacts to p-type SiC (rho
_c
reduced to < 10
^-4
Omegacm
²
), and forward voltage drift (DeltaV
_F
reduced to < 0.1 V) have been solved with design, material, and process improvements which have resulted in high overall device yields. A combination of performance, reliability, and yield has the SiC PiN diode technology poised for a revolutionary impact in the world of power semiconductor devices