Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion

We show for the first time that the reoxidation step after the gate patterning strongly affects the transistor short channel behavior. This particular oxidation induces a laterally non-uniform channel profile. From the comparison of simulation and experimental transistor data an effective interstitial decay length L
i
is extracted, determining the extent of local OED effects. We find L
i
=1.4µm for dry oxidation at 900°C.