A new quantum mechanical channel mobility model for Si MOSFET's

A new model is presented for the transverse field-dependent mobility in MOSFET's. It is based on the diffuse scattering of electrons at the Si-SiO
2
interface in the narrow inversion layer, due to the uncertainty principle related momentum, of the electrons in induced quantum levels. Our calculations for unstressed material yield µ ≈ F
^-α
with α ≈ 0.67 at high fields. For stressed material α falls to less than 0.2. Combining this channel mobility with bulk phonon scattering gives an excellent fit to a large body of data. Process-induced stress may account for the wide range in µ and α reported in the literature.