The impact of N-drain length and gate—drain/source overlap on submicrometer LDD devices for VLSI

To obtain optimal values for the key factors in enchancing the reliability and performance of deep submicrometer lightly doped drain (LDD) structures, the influence of LDD device parameters-n-drain length L
n
, gate-drain/source overlap length Γ, and n- dose N
d
-on reliability and performance were investigated using a three-dimensional (3-D) device simulator and experiment. A new device structure is discussed as a guide for deep submicrometer LDD design. This structure makes an advantageous use of the gate-drain overlap effect without scaling of L
n
and Γ.