GaAs MESFET's fabricated on InP substrates

This paper reports the first successful MESFET fabrication in GaAs layers grown directly on InP substrates by molecular beam epitaxy (MBE). The fabricated GaAs MESFET's exhibit good I-V curves with complete pinch-off and saturation characteristics. About 100-mS/ mm transconductance was obtained for a 1.2-µm gate length device.