A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits

A GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) is developed which also functions as a transverse-injection laser. The epitaxial layers for the DHBT's are grown by metalorganic vapor phase epitaxy (MOVPE). Experimentation reveals a transistor current gain of ∼ 10 and a pulsed lasing threshold of 230 mA at room temperature.