Numerical modeling of hot carriers in submicrometer Silicon BJT's

Conventional semiconductor equations do not accurately describe carrier transport phenomena particularly in submicrometer semiconductor devices because of the use of the local field-dependent mobility. In this work, a hot-carrier transport model is used in the numerical simulation of submicrometer silicon bipolar junction transistors (BJT's). The hot-carrier effect, velocity overshoot, is predicted in this model and the results compare favorably with those obtained by the Monte Carlo method, which consumes much more computer time. A heuristic iterative procedure has been developed that proves to be very efficient in solving the five coupled nonlinear semiconductor equations including the energy balance equations.