Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

In this brief we present a simple model for the current transport across the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE. Experimental data obtained on the temperature dependence of the base and collector current components yield activation energy values that correspond to E
g
(GaAs) and E
g
(GaAs)/2, respectively. The analysis of this result suggests that the majority of the recombination process takes place at the GaAs base end of the emtter-base heterojunction rather than the AlGaAs emitter region.