LECR RIBE for submicron patterning

A newly developed Reactive Ion Beam Etching (RIBE) using a gridless and DC bias- Local Electron Cyclotron Resonance (LECR) plasma system can improve the etching characteristics by applying negative DC bias voltage and a cusp field. A maskless or resistless process can be also achieved by LECR RIBE with an excimer laser or FIB technology.