Al—Ge ohmic contacts to n-type GaAs

Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10
^-6
Ω.cm
²
was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.