Functional integration of the light-triggered static induction thyristor and the static induction phototransistor

An integrated structure of the Light-Triggered and Light-Quenched Static Induction (LTQ SI) thyristor is introduced and is fabricated by the combination of the SI thyristor and the static-induction-transistor (SIT) process technology. The device consists of a buried-gate light-triggered (LT) SI thyristor and a p-channel surface-gate static induction phototransistor (SIPT). The analog voltage V
AK
of 250 V at the anode Current I
AK
of 2 A (600 A/cm
²
: channel current density) is optically switched with a triggering power of
P_{LT} = 8.8
mW/cm
²
(150 µW) and a quenching power of
P_{LQ} = 8.8
mW/cm
²
(88 µW) in a turn-on time of 1.2 µs and a turn-off delay time of 1.2µs. The integrated LTQ SI thyristor is a novel type of the self-turn-off power switching device which is turned on and off by optical means.