A low dark current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs

The Double-Schottky-Interdigitated (DSI) photodetector has been shown to be a very-high-speed optical detector for λ < 0.9 µm. Its major drawback, a high dark current (1 µA at 10 V), has been overcome by quasi-ternary growth of the GaAs epitaxial layer, reducing the dark current by three orders of magnitude.