Characterization of leakage currents in long-lifetime capacitors

The purpose of this paper is to present a new procedure that yields the material parameters characterizing leakage currents in MOS devices (generation lifetime in the depletion region τ
g
, recombination lifetime in the bulk τ
r
, interfacial generation velocity S) by means of the linear-sweep technique at different temperatures and at different depths of the depletion region. This characterization method is applied to long-lifetime MOS capacitors for which different contributions to the leakage current (generation in the depletion region, diffusion from the neutral bulk and interfacial generation) are of the same order of magnitude.