Properties of short-channel devices with thin gate oxides

MOS devices with short-channel and thin gate oxides were fabricated to investigate the dependence of the electrical properties of these devices on the oxide thickness. The measured dependence of V
T
and I
D
on channel length, gate-oxide thickness, and channel doping shows a very complicated interrelationship among these parameters. This observation suggests that the current models adopted for simulation must be modified to accommodate submicrometer devices with very thin gate oxides.