A low-barrier Schottky process using MoSi2

A technology to produce low-barrier MoSi
2
Schottky diodes for use in LSI bipolar circuits has been developed. Molybdenum disilicide is formed on single-crystal silicon by a self-aligned process under extremely clean conditions. Auger electron spectroscopy (AES) and infrared (IR) absorption techniques are used extensively to monitor the formation and thickness of MoSi
2
films. Capacitance-voltage and current-voltage measurements at varying temperatures are employed to characterize the Schottky barrier, which has a measured potential of 0.66 eV.