Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET's

We report here on low-frequency (LF) noise of GaAs/ GaAlAs TEGFET's. Present investigations show that this noise is not inherently lower in TEGFET's than in MESFET's. Moreover, the bias and frequency dependence of the noise was found to indicate that traps in GaAlAs have a fundamental influence on LF noise. A close correlation is subsequently observed between the noise level at ambient temperature and the TEGFET static and dynamic performances at low temperature (130 K).