2-D Simulations for accurate extraction of the specific contact resistivity from contact resistance data

This paper presents a unified approach for the accurate extraction of specific contact resistivity (ρ
c
) for ohmic contacts. Using 2-D simulations, which account for the current flow, or crowding around the contact window, we have analysed the resistance data obtained from the Cross Bridge Kelvin Resistor, the Contact End Resistor, and the Transmission Line Tap Resistor. For each particular structure, a universal set of curves is derived that allows accurate determination of ρ
c
, given the geometry of the structure. The values obtained for ρ
c
are independant of the test structure type, its geometry and the contact area. The data suggests that in the past researchers have overestimated ρ
c
, and that contact resistance will not limit device performance even with submicron design rules.