Electrical characteristics of thin gate implanted MOS channels grown by rapid thermal processing

The electrical characteristics of thin gate implated MOS channels grown by Rapid Thermal Processing (RTP) have been investigated. RTP is defined here to include Rapid Thermal Oxidation (RTO) and subsequent Rapid Thermal Annealing (RTA). Silicon dioxide films have been analyzed using ellipsometry, capacitance-voltage (C-V), current-voltage (I-V) and charge-to-breakdown (Q
BD
) techniques. RTO allows the growth of oxide films with thicknesses from 40 to 400 A in pure oxygen ambients at 1150 C. RTO/RTA processed oxides show average breakdown fields of 15 MV/cm, midgap interface density of states of 10
¹⁰
cm
^-2
eV
^-1
and average charge to breakdown of 80 C/cm
²
. RTO/RTA performed on implanted channels results in no detectable dopand diffusion contrary to to diffusion furnace processing. Data from SIMS and C-V measurements indicates full channel dopant activation. Thus threshold voltages correlate closely with design values without the need to include diffusion.