Bulk unipolar camel diodes formed using indium implantation into silicon

Bulk unipolar camel diodes have been made by implanting indium and arsenic into 〈100〉 silicon at low energies. It is found that a wide range of barrier heights can be obtained simply by selecting the indium energy, ideality factors being <1.1 in some cases, and leakage currents <150 nA cm
^-2
following activation of the implants at 650°C.