High-voltage planar structure using SiO2-SIPOS-SiO2film

The BV
CB0
leakage current h
FE
were studied for high-voltage planar transistors which had three kinds of passivation films; SiO
2
-semi-insulating polycrystalline silicon (SIPOS)-SiO
2
; SIPOS-SiO
2
; and SiO
2
-phosphosilicate glass (PSG)-SiO
2
. The SiO
2
-SIPOS-SiO
2
type had a lower leakage current (surface generation current) and higher h
FE
than the conventional SIPOS-SiO
2
type. The SiO
2
-SIPOS-SiO
2
type also had the highest BV
CB0
due to the field-plate effect.