Optical multiplication in solid-state imaging devices with an inherent MNOS Memory gate

A simple model is developed which is capable of predicting the product LΔ V
FB
, where L is the incoming irradiance, and Δ V
FB
is the flat-band voltage shift of the memory gate, which is proportional to the exposing light signal in the previous write cycle. Preliminary experimental results are presented which confirm the model. The optical multiplication feature leads to a real-time two-dimensional image processor through which spatial convolution or correlation can be obtained.