Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET's

The relationship between hot electrons and holes and the degradation of p- and n-channel MOSFET's is clarified by experimentally determining where along the channel the SiO
2
is most affected by each type of carrier. Transconductance degradation is found to be caused by hot-hole injection in pMOSFET's, and by hot-electron injection in nMOSFET's.