Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors

A model for the temperature dependence Of the threshold voltage of modulation-doped FET's caused by traps in doped AlGaAs is presented. The model takes into account the charge distribution in the depletion region determined by the temperature and time-dependent occupation of traps. The theory shows excellent agreement with experiment in the temperature range 77 to 400 K.