Self-aligned gate GaAs IC with 4.0-GHz clock frequency

This paper reports fabrication of high-speed GaAs divider IC's implemented using self-aligned gate (SAG) technology. BFL circuits employing SAG D-MESFET's have operated at higher clock speed (4.0 GHz) and have achieved higher yield (> 80 percent) than circuits with comparable threshold voltage and gate-length fabricated using "selective implant" or "recessed gate" technology.