Hooge parameters for various FET structures

We present here values for the Hooge parameters α
H
of various FET structures that are one or more orders of magnitude smaller than the value 2 × 10
^-3
that was first proposed. It cannot be said for certain which of these values are due to mobility-fluctuation noise and which represent number-fluctuation noise, but it seems reasonable to assume that the lowest values of α
H
are more likely due to mobility fluctuations.