A metal-gate self-aligned MOSFET using nitride oxide

A new method for making metal-gate self-aligned transistors using a thin nitrided oxide (12 nm) as a gate dielectric has been demonstrated. The nitrided thermal oxide acts as both a local oxidation mask and the final gate dielectric to produce a self-aligned thick oxide in the source-drain region. The thick oxide reduces the overlap capacitance down to that of a self-aligned polysilicon-gate device while allowing the use of a metal gate with a much lower resistivity than the more commonly used polycrystalline silicon. A high-frequency capacitance-voltage technique has been used to measure gate to source-drain overlap capacitance. The overlap capacitance was measured for a range of source-drain oxide thicknesses from 370 down to 255 nm. The capacitance increased from 0.64 to 0.74 fF/µm. The overlap capacitance of a self-aligned polycrystalline silicon-gate device with similar processing parameters was 0.98 fF/µm. The channel mobility has been determined to be approximately 350 cm
²
/V . s. Transistors with channel lengths as low as 0.7/µm were fabricated. Ring oscillators were also fabricated with stage-delays as low as 300 ps at 1.5 V and power-delay products of 70 fJ.