High-speed IIL circuits using a sidewall base contact structure

New high-speed self-aligned IIL structures with 3 µm × 3 µm collectors that produce minimum gate delays of 290 ps/gate(fanout is 1) and power delay products of 15 fJ/gate at low injector current levels are described. Maximum toggle frequency in an IIL T-type flip-flop is measured at 5 mW and found to be up to 315 MHz.