A trapping mechanism for autodoping in silicon epitaxy—I. Theory

An improved dopant incorporation model based on the trapping of surface adsorbed dopant atoms is described. The model is represented by a first-order differential equation and is characterized by three reactor-dependent parameters. The density of dopant atoms (
N_{A}^{0}
) adsorbed on the substrate surface just before epitaxial deposition is directly related to the modeling of autodoping, which is identified as an initial transient solution to the model equation.