Device performances of a submicron SOI technology

A fully CMOS bulk compatible technology has been performed on laser zone melting recrystallized silicon on insulator. Using a seeding technique submicron MOS transistors (L = 0.3 µm to 3 µm) have been processed in a grain boundary-free SOI layer, showing back leackage current < 0.2 pA/µm channel width. A 101 stages ring oscillator allows to measure propagation delay per stage of 93 ps for a supply voltage of 5V.