A simple method to determine channel widths for conventional and LDD MOSFET's

A new method to determine the channel widths and in situ gate-oxide thicknesses of conventional and LDD MOSFET's is described. The method is based on the linear relationship between the intrinsic gate capacitance and effective channel width. Measurements from two gate biases on devices of different channel widths are sufficient to obtain a full characterization. Channel widths and gate-oxide thicknesses determined by this method are given for both types of devices. This method applies to large-size as well as small-size, test devices.