Formation of a TiSi2/n+poly-Si layer by rapid lamp heating and its application to MOS devices

Ti-Si thin films, co-sputter deposited from a titanium and a poly-Si target, have been rapidly lamp heated within 10 s to produce uniform highly conductive layers comparable to furnace-heated films. MOS devices are fabricated using this Ti-Si rapid lamp heating. It is shown that rapid lamp heating results in much lesser failure involving gate oxide breakdown voltage compared to furnace heating. MOSFET's also exhibit excellent device characteristics.