A new structure GaAs MESFET with a selectively recessed gate

A new structure for GaAs MESFET's has been proposed. The structure features a gate recess which is formed on the original surface of an MBE grown GaAs active layer through selective etching of the overgrown
n^{+}-Ga_{1- x}Al_{x}As
source/drain layer. Because of heavy doping in the
Ga_{1-x}Al_{x}As
layer, the new MESFET structure offers a low source resistance. The selective etching technique for gate recess formation holds the MBE grown active layer thickness unchanged. As a result, the FET characteristics such as I
DSS
and V
p
of devices fabricated from one wafer are strikingly uniform.