A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation

A new method is proposed to determine the minority-carrier diffusion length of a semiconductor from the induced current profiles which are obtained by scanning an electron or light beam with normal incidence on a Schottky diode, The method is based on the evaluation of the first-order moment about the origin of the normalized profile and should be especially useful when current data at large scan distances are not available.