A PtSi Schottky-barrier infrared MOS area imager with large fill factor

A 64 × 64-element silicon monolithic infrared MOS area imager (IR-MOS) with platinum silicide Schottky barrier (PtSi S.B.) detectors has been developed. Using MOS X-Y address circuitry, the fill facter of the device increased to 56 percent without degradation of the dynamic range. The dynamic range was 48 dB The responsivity was
2.9\times10^{8}
V/W at 1000 K and the sensitivity was 10.5 mV/K at 300 K. The performance of the IR-MOS was sufficient to obtain a thermal image in the range of the 3 to 5 µm atmospheric window without any electrical compensation of the imaged signal.