High temperature and long life operation of new InGaAsP/InP 1.3 µm buried crescent lasers

The main purpose of this study is to realize a highly reliable InP/InGaAsP lasers even at elevated temperatures. We present and demonstrate a new BC structure (displaced BC, D-BC) with optimized device parameters such as the dimensions of the active region and the doping levels of the constituent layers. A stable long life operation for more than 4,000 hours in automatic power control (APC) mode operation at a temperature of 80° C is obtained in these new lasers. The life time of the lasers are estimated to be
8 \times 10^{4}
hours( ≃ 9 years).