InP MISFET's with plasma anodic Al2O3and interlayed native Oxide gate insulators

InP MISFET's, with native oxide film interlayed between plasma anodic Al
2
O
3
film and the InP substrate, has been fabricated and showed the instability of the drain current reduced less than ± 4 percent for the period of 5 µs ∼ 5 × 10
⁴
s. The effective electron mobility is 2100 ∼ 2600 cm
²
/V.s at room temperature. The CV characteristics of MIS diodes and AES in-depth profiles are also discussed with respect to effects of interlaying native oxide film on device characteristics.