Low-noise MESFET's for ion-implanted GaAs MMIC's

Fabrication considerations for low-noise FETs in ion-implanted GaAs monolithic microwave integrated circuits (MMIC's) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0.8-µm gate-length MMIC FETs with a noise figure Of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC's: