Properties of p-N and n-N heterointerfaces in GaAs-AlxGa1-xAs heterostructure LED's

The V-I characteristics and photoresponse spectra of p-N and n-N GaAs-Al
x
Ga
1-x
As heterojunctions have been measured. Experimental results confirmed the existance of energy levels at the heterointerface. From photoresponse spectra the position of the interface levels was determined to be 0.7-0.8 eV below the conduction band of AlGaAs. Some properties of these levels are discussed.